| 摘要 |
Disclosed is a semiconductor device comprising a substrate, a first semiconductor chip having a thickness of 0.25 mm or less and mounted on the substrate through flip-chip connection with a gap of 0.055 mm or less, a conductive connector member connecting the chip to the substrate, and a molding resin layer covering the chip and formed of a cured resin comprising 75-92% by weight of an inorganic filler and 0.5-1.5% by weight of carbon black, a portion of the molding resin layer opposite to the substrate having a thickness of 0.15 mm or less, 99 wt % of the filler having longest diameter of 35 mum or less, the average longest diameter of the filler being 15 mum or less, and the content of fine filler having a longest diameter of 10 mum or less is within the range of 30-50% by weight based on the entire filler.
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