SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor element comprising a first semiconductor region (1), a second semiconductor region (2) having a conductivity type different from that of the first semiconductor region (1), and a third semiconductor region (3) arranged between the first semiconductor region (1) and the second semiconductor region (2) while containing impurities at a low concentration. An inner junction region (8) is formed through direct junction of the first semiconductor region (1) and the second semiconductor region (2) and an outer junction region (9) is formed through junction of the third semiconductor region (3) surrounding the inner junction region (8) and the first semiconductor region (1) or the second semiconductor region (2). Since breakdown due to impurities adhering to the outer junction region (9) is eliminated, withstand voltage of the semiconductor element increases and the breakdown voltage is stabilized.