发明名称 |
Method for fabricating electronic device |
摘要 |
After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.
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申请公布号 |
US2003186537(A1) |
申请公布日期 |
2003.10.02 |
申请号 |
US20030395182 |
申请日期 |
2003.03.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMANAKA MICHINARI;YUASA HIROSHI;SATAKE TETSUO;KOBORI ETSUYOSHI;YAMASHITA TAKESHI;MATSUMOTO SUSUMU |
分类号 |
H01L21/768;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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