PLASMA PROCESSING DEVICE AND PRODUCTION METHOD OF THIN-FILM FORMING SUBSTRATE

摘要

A plasma processing device (100) comprising a processing chamber (10) in which an unprocessed substrate (50) is placed, a gas introduction port for introducing gas into the processing chamber, and a plurality of plasma discharge generation units (30) provided in the processing chamber and each having an anode and a cathode. The plurality of plasma discharge generation units selectively generate plasma discharge in association with part of the surface to be processed of the unprocessed substrate to perform plasma processing. The capability of forming on the unprocessed substrate a thin film having a specified pattern can omit a patterning step otherwise needed after film forming. The ability of selectively etching part only of the surface to be processed of the unprocessed substrate eliminates the need of forming in advance a mask having a specified pattern.