发明名称 ELECTROPOLISHING APPARATUS, ELECTROPOLISHING METHOD, AND METHOD FOR MANAUFACTURING SEMICONDUCTOR DEVICE
摘要 The formation of a groove wiring or a via contact which causes no retreat of a metal section by overpolishing by removing a section carrying little current which locally rises in a wafer face with the progress of electropolishing. In an electropolishing apparatus comprising a counter electrode (11) at a position facing a workpiece substrate (51), the counter electrode (11) consists of concentrically disposed electrodes (11a-11e). Each of the electrodes (11a-11e) has a power supply source (13) controlled independently and comprises a detector (unillustrated) for detecting a change in the current and voltage between each of the electrodes (11a-11e) and the workpiece substrate (51) and a controller (15) for controlling a power supply to the electrodes (11a-11e) on the basis of a change in the current and voltage detected by this detector.
申请公布号 WO03080899(A1) 申请公布日期 2003.10.02
申请号 WO2003JP03112 申请日期 2003.03.14
申请人 SONY CORPORATION;NOGAMI, TAKESHI;KOMAI, NAOKI 发明人 NOGAMI, TAKESHI;KOMAI, NAOKI
分类号 C25F7/00;H01L21/3063;H01L21/321;H01L21/768;(IPC1-7):C25F7/00;H01L21/306 主分类号 C25F7/00
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