发明名称 APPARATUS FOR CHEMICAL VAPOR DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for CVD for preventing generation of particles and prolonging the checking period of the apparatus. SOLUTION: This apparatus for CVD comprises a gas focus ring 70 installed on an inner side surface of a reaction chamber to inject processing gas to an upper center portion from the periphery of a wafer supporting member 50 in the reaction chamber 10, a purge gas inlet 90 formed in a bottom surface of the reaction chamber, a gas outlet 80 installed in a horizontal ring shape along a side wall of the reaction chamber so as to be located below the gas focus ring in order to exhaust the processing gas and the purge gas, one pumping line 82 to connect the gas outlet and a vacuum pump to each other, and a shielding film 85 installed horizontally at the gas outlet so as to be located at a middle part of the gas outlet so that the processing gas and the purge gas exhausted through the gas outlet are not mixed with each other at an inlet part of the gas outlet. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003277936(A) 申请公布日期 2003.10.02
申请号 JP20020316228 申请日期 2002.10.30
申请人 JUSUNG ENGINEERING CO LTD 发明人 SHIM KYUNG-SIK
分类号 C23C16/44;C23C16/455;H01L21/205;(IPC1-7):C23C16/455 主分类号 C23C16/44
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