发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device capable of reducing its size and increasing the number of chips on a wafer, and a method of manufacturing the same are provided. When manufacturing a semiconductor device, an uppermost layer as a dedicated layer for pads are formed above a layer in which power supply/ground wiring lines and wiring lines for supplying associated control signals to a memory cell unit and a control circuit are formed. The uppermost layer of the semiconductor device is comprised only of a plurality of pads 11 as an electrode for providing electrical connection with an external connection line for transmitting a signal to and from the semiconductor device, a plurality of contact holes 12 for providing electrical connection with lower wiring lines formed in a lower layer below the uppermost layer, and uppermost wiring lines 13 for connecting the plurality of pads 11 to the plurality of contact holes 12 correspondingly. In this case, the layout of the plurality of pads is made common regardless of the type of product.
申请公布号 US2003183908(A1) 申请公布日期 2003.10.02
申请号 US20030397278 申请日期 2003.03.27
申请人 UMC JAPAN 发明人 SHIGETA SHINOBU
分类号 H01L23/52;H01L21/3205;H01L21/82;H01L21/822;H01L23/485;H01L23/50;H01L23/525;H01L27/04;(IPC1-7):H01L23/495 主分类号 H01L23/52
代理机构 代理人
主权项
地址