发明名称 A CHEMICAL ETCHING PROCESS AND SYSTEM
摘要 A chemical etching system is disclosed. The controlling unit has programmable electronic device, when it is inputted various parameters, controlling unit can control etching liquid supply unit and gas supply unit. Etching liquid supply unit provide suitable etching atmosphere to cooperate with etching liquid supply unit and gas supply unit, and provide an etching stage. Controlling unit can control flow valves and electromagnetic valves of etching liquid supply unit, and adjust flow and switches of etching liquid. Controlling unit can control flow valves and electromagnetic valves of gas supply unit, and adjust flow and switches of injected gas stream.
申请公布号 WO03080262(A1) 申请公布日期 2003.10.02
申请号 WO2002CN00196 申请日期 2002.03.25
申请人 WANG, YI-CHENG 发明人 WANG, YI-CHENG
分类号 H01L21/00;(IPC1-7):B08B5/02;H01L21/302 主分类号 H01L21/00
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