| 摘要 |
A fabrication method for lines of a semiconductor device provides a substrate with a deposition layer already formed thereon, followed by forming a photoresist layer on the deposition layer. Photolithography is conducted with a mask to pattern the photoresist layer, wherein the photoresist layer is designed with the consideration of both the proximity effect and the microloading effect due to etching. Thereafter, using the patterned photoresist layer as an etching mask, an etching is conducted to form a plurality of lines. Since during the patterning of the photoresist layer, the proximity effect and the microlaoding effect are being considered, the difference in the linewidths between the dense feature region and the scattered feature region is minimized after the etching process.
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