| 摘要 |
The invention relates to a method for producing a contact substrate (10) as well as to a contact substrate with through-plating between a connector arrangement (21) arranged at the top of a dielectric carrier substrate (12) and the underside of the carrier substrate, wherein the connector arrangement extends along an aperture margin (22) of a substrate recess (15), and the underside (11) of the carrier substrate (12) is supported by a backstop (23), wherein a formed solder material part (24) is placed in the substrate recess (15), and in a subsequent method-related step said formed solder material part (24) is deformed within the substrate recess so as to form a formed contact part (50), such that radial displacement of the material of the formed solder material part in the substrate recess results in a non-positive connection between an intrados surface (28) of the substrate recess and the connector arrangement (21), and that the formed contact part provides through-plating between the connector arrangement (21) and the underside (11) of the carrier substrate.
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