ENERGY EFFICIENT METHOD FOR GROWING POLYCRYSTALLINE SILICON

摘要

Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites (120) develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like (120) dendrites causes the dendrites to grow and assume a generally flared shape.