| 摘要 |
A method of creating a memory circuit preferably includes (1) forming a first plurality of select-lines in a plane substantially parallel to a substrate, (2) forming a second plurality of select-lines in a plane substantially parallel to the substrate, where the second plurality of select-lines is divided into first and second groups, where the first group is formed in a direction normal to that of the first plurality of select-lines and the second group is formed in a direction substantially diagonal to that of the first group, (3) forming a plurality of pillars normal to the substrate, and (4) forming an array of memory cells, each memory cell being respectively coupled to a pillar and one of each of said first and second pluralities of select-lines. |
