Epitaxial coating applying method of semiconductor wafer in chemical vapor deposition reactor, involves exposing back surface of semiconductor wafer to ejection gas containing specific amount of hydrogen

摘要

An epitaxial coating is applied to a front surface of a semiconductor wafer (1) whose back surface is exposed to an ejection gas (6) containing 5 volume% or less of hydrogen gas, so that diffusion of doping substance from the back surface of the wafer is avoided. Independent claims are also included for the following: (1) semiconductor wafer; and (2) susceptor.