发明名称 |
Process for producing single crystal silicon wafers |
摘要 |
A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.
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申请公布号 |
US2003183159(A1) |
申请公布日期 |
2003.10.02 |
申请号 |
US20030402214 |
申请日期 |
2003.03.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAGAWA KATSUMI;YONEHARA TAKAO;OHMI KAZUAKI;NISHIDA SHOJI |
分类号 |
C30B29/06;C30B19/02;C30B19/12;H01L21/02;H01L21/208;H01L27/12;H01L31/04;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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