发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: a conductive plug formed through an insulating film; a conductive oxygen barrier film formed on the insulating film so as to be electrically connected to the conductive plug and to cover the conductive plug; a lower electrode formed on the oxygen barrier film and connected to the oxygen barrier film; a capacitive insulating film formed on the lower electrode, following the lower electrode; and an upper electrode formed on the capacitive insulating film, following the capacitive insulating film. The capacitive insulating film has a bent portion that extends along the direction in which the conductive plug penetrates through the insulating film.
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申请公布号 |
US2003183936(A1) |
申请公布日期 |
2003.10.02 |
申请号 |
US20030335858 |
申请日期 |
2003.01.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITO TOYOJI;FUJII EIJI |
分类号 |
H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;H01L27/108;(IPC1-7):H01L23/48 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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