| 摘要 |
PROBLEM TO BE SOLVED: To provide a large-sized ruthenium sputtering target which is utilized for the formation, e.g. of the electrode for the capacitor of a semiconductor memory, and in which the intrusion of impurities in a melting stage is suppressed, and to provide a method of producing the same. SOLUTION: The method of producing a ruthenium sputtering target comprises: a first stage where a ruthenium raw material is subjected to plasma arc melting or arc melting in a hydrogen-containing gas atmosphere to produce an ingot; a second stage where the ingot is worked into a sheet material of a prescribed size; and a third stage where a plurality of the sheet materials are joined. The ruthenium sputtering target obtained by the production method has a composition of consisting substantially ruthenium, wherein the content of hydrogen is≤5 wt.ppm, and the content of tungsten or tantalum is≤5 wt.ppm. COPYRIGHT: (C)2004,JPO
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