发明名称 Fabrication of nanometer size gaps on an electrode
摘要 A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.
申请公布号 US2003186167(A1) 申请公布日期 2003.10.02
申请号 US20030148303 申请日期 2003.01.29
申请人 JOHNSON JR ALAN T.;RADOSAVLJEVIC MARKO;LEFEBVRE JACQUES 发明人 JOHNSON JR ALAN T.;RADOSAVLJEVIC MARKO;LEFEBVRE JACQUES
分类号 H01L21/033;H01L21/3213;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):G03F7/16;G03F7/40;G21K1/00;G21K5/10 主分类号 H01L21/033
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