发明名称 Electron beam exposure apparatus and electron beam deflection apparatus
摘要 An electron beam exposure apparatus for exposing a pattern to a wafer by a plurality of electron beams, comprising an electron beam generating section for generating a plurality of electron beams, a deflecting section having a plurality of deflectors for deflecting the plurality of electron beams, and a screening section having a first screen electrode disposed between the plurality of deflectors and extending from a position close to the electron beam generating section from one end of the deflector to a position close to the wafer from one end of the deflector along the direction of radiation of electron beams.
申请公布号 US2003183778(A1) 申请公布日期 2003.10.02
申请号 US20030422304 申请日期 2003.04.23
申请人 ADVANTEST CORPORATION 发明人 HARAGUCHI TAKESHI
分类号 G03F7/20;H01J37/09;H01J37/147;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):G03B27/42 主分类号 G03F7/20
代理机构 代理人
主权项
地址