| 摘要 |
A nonvolatile semiconductor memory (30) capable of random programming has a semiconductor substrate (32) of a first conductivity type having a memory region, a deep ion well (34) of a second conductivity type located in the semiconductor substrate (32) within the memory region, a shallow ion well (36) of the first conductivity type isolated by an STI layer (38) within the deep ion well (34), at least one NAND cell block (B) located on the semiconductor substrate (32) within the shallow ion well (36), and a bit line (BL) located over the semiconductor substrate (32) used to provide a first predetermined voltage for the shallow ion well (36) during a data program mode via a conductive plug (40) which electrically connects to the bit line (32) and extends downward to the shallow ion well (36). Consequently, during a programming operation, only a selected word line (WL) is required to have an appropriate voltage applied to it. Thus, the power needed is reduced and access time is shortened. <IMAGE>
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