| 摘要 |
PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) SRAM device is provided to be capable of preventing degradation of the TFT by improving a contact plug between the third and fourth polysilicon layer. CONSTITUTION: The third polysilicon layer(15) as a gate of a TFT is formed. After forming a gate oxide layer(16) on the third polysilicon layer, the fourth polysilicon layer as a channel is formed without using a contact. A load oxide layer(18) and an interlayer dielectric(19) are sequentially formed on the resultant structure. A node contact hole is formed by sequentially patterning the fourth polysilicon layer, the gate oxide layer and the third polysilicon layer. A barrier layer(21) and a metal plug(22) are formed in the node contact hole, thereby forming a metal node contact for connecting directly the third and fourth polysilicon layer.
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