| 摘要 |
<p>The present invention provides a spin valve magnetic detecting element having large DeltaR. The positive or negative sign of the beta value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is defined so that the resistance values for spin-up conduction electrons are smaller than the resistance values for spin-down conduction electrons in all magnetic layers when magnetization of a free magnetic layer is changed to minimize the resistance value. In this case, the change DeltaR in resistance of the magnetic detecting element can be increased.</p> |
