| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to be capable of reducing the leakage current of the devices. CONSTITUTION: A field oxide layer(110) is formed to define an active region of a substrate(100). A punch-through protection region(102) is formed in the active region. A gate electrode is formed on the active region. An LDD(Lightly Doped Drain) region(141) is formed in the substrate. After forming a mask pattern for opening the active region, a hallow region(103) is formed at lower of the LDD region. A spacer is formed at both sidewalls of the gate electrode. Then, a source and drain region are formed in the substrate(100).
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