| 摘要 |
PURPOSE: A method for fabricating an LCD array substrate and TFTs is provided to prevent the generation of leakage current for making the high definition screen by forming etch stopper type thin film transistors. CONSTITUTION: A method for fabricating an LCD array substrate and TFTs includes the steps of defining pixel areas, active areas, and switching areas defined by source/drain areas, forming gate electrodes(114) by depositing a metal on a substrate through a first masking, forming a gate insulating film(118) on the entire surface of the substrate, and stacking a pure amorphous silicon layer(119), an etch stopper layer(121), and a photoresist layer(123) on the gate insulating film. Masks are positioned on blocking areas(M1), slit areas(M2) formed of a plurality of sits, and transmission areas(M3). The photoresist film is formed and patterned with different thickness on the active areas(A) and the source/drain areas(B) by second masking. First and second etching steps are carried out for etching the etch stopper layer, and removing the amorphous silicon layer exposed by the etching of the etch stopper layer and the PR layer of the source/drain areas of the patterned etch stopper layer, thereby forming an active layer. An etch stopper film is formed on the active areas by dry etching of partially exposed areas of the patterned etch stopper layer. The residual PR layer on the etch stopper layer is removed by third etching, and impurity amorphous silicon layer and a metal layer are stacked on the entire surface of the substrate. Source/drain electrodes and data wires are formed by etching the metal layer by third masking. An ohmic contact layer is formed by etching the amorphous silicon layer exposed among the source/drain electrodes and the data wires. Drain contact holes are formed by third masking to expose the drain electrodes partially. Transparent pixel electrodes are formed to be connected to the drain electrodes by fifth masking. |
