The invention is an element-doped diamond crystal having an increased compressive fracture strength wherein the concentration of element-doping impurities increases between the center and the surface of the diamond crystal, thereby generating tangential compressive stresses at the surface of the diamond crystal. The invention also includes methods of making the diamond crystal. <IMAGE>
申请公布号
EP0892092(B1)
申请公布日期
2003.10.01
申请号
EP19970305317
申请日期
1997.07.16
申请人
GENERAL ELECTRIC COMPANY
发明人
D'EVELYN, MARK P.;PARK, DONG-SIL;ANTHONY, THOMAS RICHARD;SPIRO, CLIFFORD LAWRENCE;MENG, YUE