Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region. <IMAGE>
申请公布号
EP1349246(A2)
申请公布日期
2003.10.01
申请号
EP20020023534
申请日期
2002.10.22
申请人
AGILENT TECHNOLOGIES, INC.
发明人
TAKEUCHI, TETSUYA;CHANG, YING-LAN;BOUR, DAVID P.;LEARY, MICHAEL H.;TAN, MICHAEL R.
