| 摘要 |
<p>A semiconductor device provided with a silicon carbide semiconductor substrate (1), and an ohmic metal layer (2) joined to one surface of the silicon carbide semiconductor substrate (1) in an ohmic contact and composed of a metal material whose silicate formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer (2) is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.</p> |
