发明名称 Semiconductor integrated circuit
摘要 An oscillating section 110 comprises feedback inverter INV1 and feedback resistor R2, and a waveform shaping section 120 includes a Schmitt circuit S1 of which transistors P3 and N3 respectively receive, as gate control signals, signals Gp3 and Gn3 generated by a stable-oscillation signal A1 and logic elements AND1, OR1 and INV3, respectively. The supply of power to the waveform shaping section 120 is performed through a low pass filter 111 comprising a resistor R1 and a capacitor C1. Thus a high potential power source VDD is supplied to the waveform shaping section 120 as a high potential power source VDDX. <IMAGE>
申请公布号 EP1349276(A2) 申请公布日期 2003.10.01
申请号 EP20030090082 申请日期 2003.03.26
申请人 NEC ELECTRONICS CORPORATION 发明人 MATSUSHITA, RUMI.
分类号 H03B5/02;H03B5/32;H03K3/013;H03K3/03;(IPC1-7):H03K3/03 主分类号 H03B5/02
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