发明名称 SOI voltage-tolerant body-coupled pass transistor
摘要 A method and device for A pass transistor device which includes a source; a drain opposite the source, a body between the source and the drain, and a circuit control network connected between the drain and the source, wherein the circuit control network controls a potential voltage of the body and provides overvoltage protection to the pass transistor.
申请公布号 US6628159(B2) 申请公布日期 2003.09.30
申请号 US19990398840 申请日期 1999.09.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 VOLDMAN STEVEN H.
分类号 H01L27/12;H01L29/786;(IPC1-7):H03K3/01 主分类号 H01L27/12
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