发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
In a combined isolation oxide film (BT1), a part closer to a gate electrode (GT13) reaches a buried oxide film (2) through an SOI layer (3) while a part closer to another gate electrode (GT12) has a sectional shape provided with a well region on its lower portion. The shape of an edge portion of the combined isolation oxide film (BT1) is in the form of a bird's beak in a LOCOS isolation oxide film. Consequently, the thicknesses of portions defining edge portions of the gate oxide films (GO12, GO13) are locally increased. Thus provided are a semiconductor device including a MOS transistor having a gate oxide film prevented from dielectric breakdown without increasing its thickness and a method of manufacturing the same.
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申请公布号 |
US6627512(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20020090607 |
申请日期 |
2002.03.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IWAMATSU TOSHIAKI;IPPOSHI TAKASHI;MATSUMOTO TAKUJI |
分类号 |
H01L21/76;H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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