| 摘要 |
PURPOSE: A method for manufacturing an analog semiconductor device is provided to be capable of improving topology between a transistor region and a capacitor region. CONSTITUTION: A semiconductor substrate(21) defined by a transistor region(A) and a capacitor region(B) is prepared. A trench(24) is formed on a lower electrode forming region of the capacitor region. A lower electrode(25a) is filled in the trench. An insulating layer and a conductive layer are sequentially formed on the resultant structure. By patterning the conductive layer and the insulating layer, a gate oxide layer(27a) and a gate(300a) are formed on the transistor region, and a dielectric film(27b) and an upper electrode(300b) are simultaneously formed on the lower electrode of the capacitor region.
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