发明名称 |
Method and apparatus for depositing a tantalum-containing layer on a substrate |
摘要 |
A method of forming a tantalum-containing layer on a substrate is described. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. The electric field is generated by applying a power of at least 8 kilowatts to the tantalum-containing target. The magnetic field is generated from a magnetron including a first magnetic pole of a first magnetic polarity surrounded by a second magnetic pole of a second magnetic polarity opposite the first magnetic polarity. The first magnetic pole preferably has a magnetic flux at least about 30% greater than a magnetic flux of the second magnetic pole. The tantalum-containing layer deposition method is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is formed.
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申请公布号 |
US6627050(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20010916412 |
申请日期 |
2001.07.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MILLER MICHAEL ANDREW;DING PEIJUN;TANG HOWARD;CHIANG TONY;FU JIANMING |
分类号 |
C23C14/06;C23C14/35;C30B25/02;H01J37/34;H01L21/285;H01L21/768;(IPC1-7):C23C14/34;B05D1/36;G06F12/00 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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