发明名称 Photolithographic mask fabrication
摘要 A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.
申请公布号 US6627362(B2) 申请公布日期 2003.09.30
申请号 US20010984631 申请日期 2001.10.30
申请人 INTEL CORPORATION 发明人 STIVERS ALAN R.;LIANG SHOUDENG;LIEBERMAN BARRY
分类号 G03F1/00;G03F1/08;G03F1/14;(IPC1-7):G03F9/00 主分类号 G03F1/00
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