发明名称 |
Memory system capable of operating at high temperatures and method for fabricating the same |
摘要 |
A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.
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申请公布号 |
US6627924(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20010845695 |
申请日期 |
2001.04.30 |
申请人 |
IBM CORPORATION |
发明人 |
HSU LOUIS L.;WANG LI-KONG |
分类号 |
H01L21/00;H01L21/82;H01L27/06;H01L27/102;H01L29/74;H01L31/0312;H01L31/111;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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