发明名称 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
摘要 A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
申请公布号 US6626968(B2) 申请公布日期 2003.09.30
申请号 US20010861697 申请日期 2001.05.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK YOUNG-RAE;KIM JUNG-YUP;YOON BO-UN;KIM KWANG-BOK;BOO JAE-PHIL;LEE JONG-WON;HAH SANG-ROK;KIM KYUNG-HYUN;HONG CHANG-KI
分类号 B24B37/00;B24B37/04;C09G1/02;C09K3/14;H01L21/304;H01L21/306;H01L21/3105;H01L21/3205;H01L21/321;H01L21/76;H01L21/762;H01L21/768;(IPC1-7):C09G1/02;C09G1/04 主分类号 B24B37/00
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