发明名称 Continuous processing chamber
摘要 A processing system for processing a wafer with a processing vapor is provided. The processing system comprises a chamber, a wafer holder disposed within the chamber for holding the wafer, a drive mechanism for moving the wafer holder through the chamber, and a processing vapor inlet disposed within the chamber for introducing the processing vapor into the chamber and directing the processing vapor onto the wafer. The processing vapor inlet has a generally elongate cross-section configured to create a flow of processing vapor with a generally elongate cross-section and to direct the flow onto the wafer surface in an orientation generally perpendicular to the wafer surface, thus causing the formation of a generally linear stagnation zone in the flow of the processing vapor where the flow meets the wafer surface. The processing system may include a first outlet positioned toward the front of the chamber and a second outlet positioned toward the back of the chamber.
申请公布号 US6626997(B2) 申请公布日期 2003.09.30
申请号 US20010861415 申请日期 2001.05.17
申请人 SHAPIRO NATHAN P. 发明人 SHAPIRO NATHAN P.
分类号 C23C16/44;C23C16/455;C23C16/54;(IPC1-7):H01L21/305;C23C16/00 主分类号 C23C16/44
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