发明名称 Flash memory with accelerated transient state transitions
摘要 A non-volatile memory unit includes memory units for providing a data current corresponding to stored data; a first load unit having a first end; a second load unit having a second end; and a sensing unit. The first load unit and the second load unit can receive current input to build voltages respectively at the first end and the second end. When the memory unit provides the data current, the second load unit is enabled such that the data current inputs into the first load unit and the second load unit; then the second load is disabled after a predetermined time such that the data current inputs into the first load unit only, and the sensing unit generates a data signal for data-acquisition according to a voltage difference between the voltage at the first end and a reference voltage.
申请公布号 US6628548(B1) 申请公布日期 2003.09.30
申请号 US20020248044 申请日期 2002.12.12
申请人 EMEMORY TECHNOLOGY INC. 发明人 HSU YU-MING;HU LING-CHANG
分类号 G11C16/06;G11C16/04;G11C16/28;(IPC1-7):G11C16/06;G11C7/02 主分类号 G11C16/06
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