| 摘要 |
Antireflective structures according to the present invention comprise a metal silicon nitride composition in a layer that is superposed upon a layer to be patterned that would other wise cause destructive reflectivity during photoresist patterning. The antireflective structure has the ability to absorb light used during photoresist patterning. The antireflective structure also has the ability to scatter unabsorbed light into patterns and intensities that are ineffective to photoresist material exposed to the patterns and intensities. One preferred material for the antireflective layer includes metal silicon nitride ternary compounds of the general formula MxSiyNz, where M is at least one transition metal, x is less than y and z is greater than about 0 and less than about 5y.
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