| 摘要 |
Disclosed herein is a method of fabricating a semiconductor device using a damascene process. The method comprises the steps of: forming a dummy gate electrode on a semiconductor substrate; forming a source/drain region in the substrate; polishing and planarizing an interlayer insulating film formed on the substrate to expose the dummy gate electrode; etching the dummy gate electrode to form a groove in an exposed portion of the substrate; implanting impurity ions into the exposed portion of the substrate to form a delta-doping layer; thermally treating the semiconductor substrate to activate the implanted impurity ions; growing a silicon film on the exposed portion of the substrate by a selective epitaxial process; depositing a gate insulating film on the surface of the groove; and depositing a gate metal film on the gate insulating film in the groove, forming the gate electrode.
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