| 发明名称 |
High speed trench DMOS |
| 摘要 |
A method for making trench DMOS is provided that utilizes polycide and refractory techniques to make trench DMOS which exhibit low gate resistance, low gate capacitance, reduced distributed RC gate propagation delay, and improved switching speeds for high frequency applications.
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| 申请公布号 |
US6627951(B2) |
申请公布日期 |
2003.09.30 |
| 申请号 |
US20010882117 |
申请日期 |
2001.06.15 |
| 申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG |
| 分类号 |
H01L21/336;H01L29/423;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
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