发明名称 Photoresist composition for resist flow process, and process for forming contact hole using the same
摘要 Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.
申请公布号 US6627379(B2) 申请公布日期 2003.09.30
申请号 US20010837394 申请日期 2001.04.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM JIN SOO;JUNG JAE CHANG;LEE GEUN SU;BAIK KI HO
分类号 C08F212/14;C08F220/10;C08K5/00;C08L25/18;C08L33/04;G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/004 主分类号 C08F212/14
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