发明名称 |
Photoresist composition for resist flow process, and process for forming contact hole using the same |
摘要 |
Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.
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申请公布号 |
US6627379(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20010837394 |
申请日期 |
2001.04.18 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM JIN SOO;JUNG JAE CHANG;LEE GEUN SU;BAIK KI HO |
分类号 |
C08F212/14;C08F220/10;C08K5/00;C08L25/18;C08L33/04;G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/004 |
主分类号 |
C08F212/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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