发明名称 |
Method of processing substrates using pressurized mist generation |
摘要 |
A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.
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申请公布号 |
US6626189(B2) |
申请公布日期 |
2003.09.30 |
申请号 |
US20020304583 |
申请日期 |
2002.11.25 |
申请人 |
AKRION, LLC |
发明人 |
KASHKOUSH ISMAIL;NOVAK RICHARD;NEMETH DENNIS;CHEN GIM-SYANG |
分类号 |
H01L21/027;B08B3/02;B08B7/00;H01L21/00;H01L21/304;(IPC1-7):B08B3/00;B08B3/12 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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