| 摘要 |
To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 mum or less.
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