| 摘要 |
PROBLEM TO BE SOLVED: To prevent a diffusion into an I-type crystallite semiconductor layer of phosphorus or boron as valence control elements from a doping layer, by composing the I-type semiconductor layer of crystallite silicon, and forming an impurity diffusion preventive layer between the I-type semiconductor layer and an N-type semiconductor layer. SOLUTION: In the photosensor, a pair of N-I-P Junctions in which an N-type semiconductor layer 104 consisting of the unsingle crystal of silicon containing hydrogen, an I-type semiconductor layer 106 and a P-type semiconductor layer 108 are laminated successively, are formed onto a conductive substrate 101. The I-type semiconductor layer 106 is made up of crystallite silicon, and an impurity diffusion layer 105 is formed between the I-type semiconductor layer 106 and the N-type semiconductor layer 104. The photosensor has constitution in which light is projected from the P-type semiconductor layer side, but the P-type semiconductor layer is formed as 104 and the N-type semiconductor layer as 108 at the time of constitution in which light is projected from the N-type semiconductor layer side. Each layer is laminated in reverse order with the exception of the substrate at the time of constitution, in which light is projected from the substrate side. |
