| 摘要 |
PROBLEM TO BE SOLVED: To enable light emitting devices of high luminous efficacy to be integrated with capability kept high in degree of integration. SOLUTION: The Al compositional ratios y, x, and z, of a first, a second, and a third AlGaAs semiconductor layer, 104, 105, and 103, are different from each other, and provided that the energy band gaps of the layers 104, 105, and 103 are represented by Eg1 , Eg2 , and Eg3 , Eg1 , Eg2 and Eg3 are set so as to satisfy formulas, Eg1 <Eg2 , and Eg1 <Eg3 (y<x and y<z). A PN front 120 formed through a P-type region 125 doped with P-type impurities and the N-type region of a semiconductor substrate 100 is formed on an interface between the first semiconductor layer 104 and the second semiconductor layer 105. A light emitting diode(LED) 130 emits light whose wavelength is corresponding to the energy band gap of the first semiconductor layer 104. The LEDs 130 are integrated on a semiconductor substrate 100 in the pitch dimension of P-type region 125 or P-side electrode 109. |
