发明名称 PLASMA CVD METHOD, PLASMA CVD APPARATUS, AND ELECTRODE
摘要 <p>A plasma CVD method for forming a uniform or substantially uniform film on the outer surface of a hollow article irrespective of the shape of the article. A plasma CVD apparatus and an electrode used for the method and apparatus are also disclosed. A film-forming source gas is supplied with electric power and turned into a plasma. By exposing the outer surface of a hollow article having an opening part in the outer surface to the plasma, a film is formed on the outer surface. An inner electrode provided in the hollow of the hollow article and an outer electrode provided outside the hollow article are used to supply electric power for turning the gas into a plasma. The inner electrode can selectively take either a reduced size small enough to pass through the opening part of the hollow article or an expanded size predetermined according to the volume and shape of the hollow. After the inner electrode is passed through the opening part of the hollow article taking the reduced size and is inserted in the hollow, the size of the inner electrode is changed to the expanded size. Alternatively, the material of the inner electrode may be a conductive fluid capable of flowing through the opening part into/from the article, and the fluid is allowed to flow into the hollow through the opening part to form the inner electrode.</p>
申请公布号 WO1999045168(P1) 申请公布日期 1999.09.10
申请号 JP1999000998 申请日期 1999.03.02
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