| 摘要 |
<p>A sputtering target which can be applied to the DC sputtering method, used for stably forming a transparent conductive film having a resistivity of 10?-2 to 1010¿ Φ.cm, and is made of an oxide containing Zn, Al, and Y, and a transparent conductive film which has a resistivity of 10?-2 to 1010¿ Φ.cm and a low light absorption factor, and is made of an oxide containing Zn, Al, and Y are disclosed.</p> |
