| 摘要 |
The present invention provides a method of producing SOI materials. The method involves implanting oxygen ions in a silicon substrate to form an implanted region at a relatively shallow depth using a plasma implantation step. The substrate is then annealed at elevated temperatures to convert the implanted region to an insulating layer which may be beneath a thin silicon seed layer. A silicon layer is grown, preferably epitaxially, on the thin silicon seed layer to provide a high quality single crystal in which devices may be formed. The SOI materials are suitable for use as substrates in a wide variety of SOI applications.
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