METHOD FOR FORMING METAL GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal gate of a semiconductor device is provided to be capable of obtaining a good gate profile and preventing the generation of bridge by carrying out the following CMP(Chemical Mechanical Polishing) process after depositing an etch stop layer when forming a dummy gate. CONSTITUTION: After sequentially forming a dummy gate isolating layer(410), a dummy gate(420), a stress buffer layer(423), and a CMP stop layer(425) at the upper portion of a semiconductor substrate(400), an oxidation process is carried out at the resultant structure. A spacer(440) is formed at both sidewalls of the dummy gate. After forming an insulating layer(450) on the entire surface of the resultant structure, a CMP process is carried out at the insulating layer for exposing the CMP stop layer. After removing the dummy gate part from the resultant structure for forming an opening portion, a gate isolating layer and a metal gate are sequentially formed in the opening portion.