| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent deterioration of a ferro-dielectric film in a capacitor when forming an insulation film covering a capacitor, and to provide its manufacturing method. <P>SOLUTION: The manufacturing method of the semiconductor device comprises a process for forming a first insulation film 9 above a silicon substrate (semiconductor substrate) 1; a process for forming a lower electrode 11a of a capacitor Q, a dielectric film 12a, and an upper electrode 13a on the first insulation film 9; a process for forming a first capacitor protection insulation film 14 covering at least the upper dielectric film 12a and the upper electrode 13a; a process for forming a second capacitor protection insulation film 16 covering the first capacitor protection insulation film 14 by chemical vapor deposition without applying a bias voltage to the silicon substrate 1; and a process for forming a second insulation film 17 by chemical vapor deposition applying a bias voltage to the semiconductor substrate 1. <P>COPYRIGHT: (C)2003,JPO |
