| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory whose cell area per bit can be made so smaller than conventional 4F<SP>2</SP>as to be equal to, e.g. 2F<SP>2</SP>. <P>SOLUTION: The non-volatile semiconductor memory for storing information by accumulating charges therein, includes: a set of bit lines formed in nearly parallel with each other; a semiconductor substrate including the bit lines and a channel region interposed between the bit lines; a buried gate extended in nearly parallel with the bit lines which comprises a conductor layer provided above the channel region via an ONO film comprising a nitride film interposed between oxide film; a floating gate provided above the channel region via a gate oxide film in nearly parallel with the buried gate; insulation layers for covering therewith the floating gate and the buried gate; and a word line provided on the insulation layers present above the floating gate which is nearly orthogonal to the bit lines. In this case, charges are accumulated in the floating gate and/or the nitride film included in the ONO film. <P>COPYRIGHT: (C)2003,JPO</p> |
